DatasheetsPDF.com

POWER MOSFET. AP86T03GH-HF Datasheet

DatasheetsPDF.com

POWER MOSFET. AP86T03GH-HF Datasheet






AP86T03GH-HF MOSFET. Datasheet pdf. Equivalent




AP86T03GH-HF MOSFET. Datasheet pdf. Equivalent





Part

AP86T03GH-HF

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


Advanced Power Electronics Corp. AP86T0 3GH-HF Halogen-Free Product N-CHANNEL E NHANCEMENT MODE POWER MOSFET ▼ Low O n-resistance D ▼ Simple Drive Requi rement ▼ Fast Switching Characterist ic G ▼ RoHS Compliant & Halogen-Free S Description AP86T03 series are from Advanced Power innovated design and si licon process technology to achieve th e switching performance. I.
Manufacture

Advanced Power Electronics

Datasheet
Download AP86T03GH-HF Datasheet


Advanced Power Electronics AP86T03GH-HF

AP86T03GH-HF; t provides lowest possible on-resistanc e the designer with an extreme aenffdi cf□ieanstt device for use in a wide range of power applications. The TO-25 2 package is widely preferred for all c ommercial-industrial surface mount app lications using infrared reflow techniq ue and suited for high current applica tion due to the low connection resistan ce. BVDSS RDS(ON) I.


Advanced Power Electronics AP86T03GH-HF

D 30V 6.5mΩ 75A G D S TO-252(H) Abs olute Maximum Ratings@Tj=25o.C(unless o therwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@ TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Curr ent, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Diss ipation 30 V +20 V 75 A 55 A 300 A 75 W TSTG TJ Storage Tempe.


Advanced Power Electronics AP86T03GH-HF

rature Range Operating Junction Temperat ure Range -55 to 175 -55 to 175 ℃ Thermal Data Symbol Parameter Rt hj-c Maximum Thermal Resistance, Junct ion-case Rthj-a Maximum Thermal Resis tance, Junction-ambient (PCB mount)3 D ata & specifications subject to change without notice Value 2.0 62.5 Units /W ℃/W 1 201408262 AP86T03GH-HF E lectrical Characteristics@.

Part

AP86T03GH-HF

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


Advanced Power Electronics Corp. AP86T0 3GH-HF Halogen-Free Product N-CHANNEL E NHANCEMENT MODE POWER MOSFET ▼ Low O n-resistance D ▼ Simple Drive Requi rement ▼ Fast Switching Characterist ic G ▼ RoHS Compliant & Halogen-Free S Description AP86T03 series are from Advanced Power innovated design and si licon process technology to achieve th e switching performance. I.
Manufacture

Advanced Power Electronics

Datasheet
Download AP86T03GH-HF Datasheet




 AP86T03GH-HF
Advanced Power
Electronics Corp.
AP86T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
AP86T03 series are from Advanced Power innovated design and silicon
process technology to achieve the
switching performance. It provides
lowest possible on-resistance
the designer with an extreme
aenffdicfieanstt
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
30V
6.5mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
30 V
+20 V
75 A
55 A
300 A
75 W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
2.0
62.5
Units
/W
/W
1
201408262




 AP86T03GH-HF
AP86T03GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- - 6.5 m
- - 11 m
1 - 3V
- 58 -
S
- - 10 uA
- - +100 nA
- 25 40 nC
- 5.6 - nC
- 17 - nC
- 10.5 -
ns
- 78 - ns
- 27 - ns
- 16 - ns
- 2170 3500 pF
- 485 -
pF
- 310 - pF
- 1.1 2.2 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 35 - ns
- 36 - nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




 AP86T03GH-HF
AP86T03GH-HF
250
T C =25 o C
200
150
100
50
10V
7.0 V
6.0V
5.0 V
V G = 4.0 V
0
0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I D =30A
T C =25 o C
10
120
T C =175 o C
10V
7 .0V
100
6.0V
5.0 V
80
60
V G =4.0V
40
20
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
1.6
.8 1.2
6 0.8
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
30 1.2
T j =175 o C
T j =25 o C
20 0.8
10 0.4
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3



Recommended third-party AP86T03GH-HF Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)