MOSFET. ICE10N60FP Datasheet

ICE10N60FP Datasheet PDF


Part

ICE10N60FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Page 4 Pages
Datasheet
Download ICE10N60FP Datasheet


ICE10N60FP Datasheet
ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID
V(BR)DSS
rDS(ON)
Qg
Product Summary
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
10A
600V
0.28Ω
41nC
Max
Min
Typ
Typ
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
Pin Description:
TO-220
G
Value
10
30
340
5
50
±20
±30
35
-55 to +150
50
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
Conditions
TC = 25°C
TC = 25°C
ID = 8.3A
Limited by Tjmax
VDS = 480V, ID = 10A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 3.5
RthJA Thermal Resistance, Junction to Ambient
- - 80
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260
lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 630 -
2.1 3 3.9
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.28 0.33
- 0.75 -
RGS Gate Resistance
-5-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 5A, Tj = 25°C
VGS = 10V, ID = 5A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
1

ICE10N60FP Datasheet
ICE10N60FP
Symbol Parameter
Dynamic Characteristics
Ciss
Coss
Crss
gfs
td(on)
Tr
td(off )
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Characteristics
Qgs
Qgd
Qg
Vplateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irm Peak Reverse Recovery Current
Values
Min Typ Max
Unit Conditions
- 1250 -
- 600 -
-5-
- 12 -
-6-
- 3.5 -
- 54 -
-7-
pF VGS = 0V, VDS = 25V, f = 1 MHz
S VDS = >2*ID* RDS, ID = 5A
nS
VDS = 480V, VGS = 10V, ID = 10A, RG = 4Ω
(External)
- 7.1 -
- 14.5 -
- 41 -
- 5.2 -
nC
VDS = 480V, ID = 10A, VGS = 0 to 10V
V
- 0.9 1.2
- 332 -
- 4.4 -
- 25.6 -
V VGS = 0V, IS = IF
ns
µC VRR = 300V, IS = IF, diF/dt = 100 A/µS
A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
2


Features Datasheet pdf ICE10N60FP N-Channel Enhancement Mode MO SFET ID V(BR)DSS rDS(ON) Qg Product S ummary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC Max Min Typ Typ Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capa bility High Unclamped Inductive Switc hing (UIS) Capability High Peak Curre nt Capability Increased Transconducta nce Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter ID ID, pu lse EAS IAR dv/dt Continous Drain Curr ent Pulsed Drain Current Avalanche Ener gy, Single Pulse Avalanche Current, Rep etitive MOSFET dv/dt Ruggedness VGS Pt ot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Tempe rature Mounting Torque Pin Description : TO-220 G Value 10 30 340 5 50 ±20 ±30 35 -55 to +150 50 Unit A A mJ A V/ns V W °C Ncm Conditions TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws.
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