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TGM2635-CP

TriQuint Semiconductor
Part Number TGM2635-CP
Manufacturer TriQuint Semiconductor
Description X-Band 100 W GaN Power Amplifier
Published Sep 27, 2016
Detailed Description TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635–CP is a packaged X-band, high power am...
Datasheet PDF File TGM2635-CP PDF File

TGM2635-CP
TGM2635-CP

Overview
TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635–CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.
25um GaN on SiC process.
The TGM2635–CP operates from 7.
9 – 11 GHz and provides 100 W of saturated output power with 22.
5 dB of large signal gain and greater than 35 % power– added efficiency.
The TGM2635-CP is packaged in a 10-lead 19.
05 x 19.
05 mm bolt-down package with a pure Cu base for superior thermal management.
Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGM2635-CP is ideally suited for both commercial and military X-Band radar systems, satellite communications systems, and data links.
RoHS compliant.
Key Features • Frequency Range: 7.
9 – 11 GHz • PSAT: 50 dBm (PIN = 28 dBm) • PAE: 35% (PIN = 28 dBm) • Large Signal Gain: 22 dB (PIN = 28 dBm) • Small Signal Gain: 26 dB • Bias: VD = 28 V, IDQ = 1.
3 A • Package Dimensions: 19.
05 x 19.
05 x 4.
52 mm • Performance Under Pulsed Operation Functional Block Diagram Applications • X-band Radar • Satellite Communications • Data Links Top View Data Sheet Rev.
H, May 2023 Ordering Information Part Description TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.
qorvo.
com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85°C, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 50 Ω, 85°C , VD = 28 V, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 85°C, VSWR 3:1, VD = 28 V, Pulsed; PW = 100 us, DC = 10% Mounting Temperature Storage Temperature See plot page 9 316 W 33 dBm 33 dBm Refer to Assembly Notes, page 13 −55 to 150 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to the device...


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