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AP73T02GJB

Advanced Power Electronics
Part Number AP73T02GJB
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Oct 6, 2016
Detailed Description Advanced Power Electronics Corp. AP73T02GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resi...
Datasheet PDF File AP73T02GJB PDF File

AP73T02GJB
AP73T02GJB

Overview
Advanced Power Electronics Corp.
AP73T02GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description AP73T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
BVDSS RDS(ON) ID 25V 9mΩ 57A GD S TO-251S(JB) Absolute Maximum Ratin...


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