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NJD1718

Inchange Semiconductor
Part Number NJD1718
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 17, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A...
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NJD1718
NJD1718

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
5V(Max)( IC= -1A; IB= -0.
05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -50 V -50 V -5 V -2 A -3 A -0.
4 A 15...


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