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SiHJ8N60E

Part Number	SiHJ8N60E
Manufacturer	Vishay
Description	E Series Power MOSFET
Published	Oct 21, 2016
Detailed Description	www.vishay.com SiHJ8N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 2...
Datasheet	SiHJ8N60E PDF File

Overview

www.
vishay.
com SiHJ8N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) typ.
at 25 °C () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 44 5 10 Single 0.
45 PowerPAK® SO-8L Single D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Switch mode power supplies (SMPS) • Flyback converter • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer - Wall adaptors ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SiHJ8N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energy b EAS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ, Tstg Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C dV/dt Notes a.
Repetitive rating; pulse width limited by maximum junction temperature b.
VDD = 50 V, starting TJ = 25 °C, L = 28.
2 mH, Rg = 25 , IAS = 2.
5 A c.
ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C LIMIT 600 ± 30 8 5 18 0.
71 88 89 -55 to +150 70 17 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP.
52 1 MAX.
65 1.
4 UNIT V A W/°C mJ W °C V/ns UNIT °C/W S19-0745-Rev.
B, 26-Aug-2019 1 Document Number: 91563 For technical questions, contact: hvm@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
c...

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