Power Transistors. 2N6546 Datasheet

2N6546 Transistors. Datasheet pdf. Equivalent


Part 2N6546
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6546 2N6547 DESCRIPTI.
Manufacture SavantIC
Datasheet
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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MI 2N6546 Datasheet
2N6546 Datasheet
2N6546 2N6547 NPN SILICON POWER TRANSISTOR w w w. c e n t r 2N6546 Datasheet
SavantIC Semiconductor Silicon NPN Power Transistors Produc 2N6546 Datasheet
2N6546 Datasheet
2N6546 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6546 Datasheet
Recommendation Recommendation Datasheet 2N6546 Datasheet




2N6546
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6546 2N6547
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
Suited for 115 and 220 volt line operated
switch-mode applications such as :
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6546
2N6547
VCEO
Collector-emitter voltage
2N6546
2N6547
VEBO
IC
ICM
IB
IE
IEM
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Emitter current
Emitter current-peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
650
850
300
400
9
15
30
10
25
50
175
200
-65~200
UNIT
V
V
V
A
A
A
A
A
W



2N6546
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6546 2N6547
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6546
2N6547
IC=100mA ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A
VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
Collector cut-off current
2N6546
2N6547
Emitter cut-off current
IC=10A ;IB=2A
VCE=650V; VBE(off)=1.5V
TC=100
VCE=850V ;VBE(off)=1.5V
TC=100
VEB=9V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
td Delay time
tr Rise time
tstg Storage time
tf Fall time
IC=10A; IB1=-IB2=2.0A
VCC=250V; tp=0.1ms;
Duty CycleD2.0%
MIN TYP. MAX UNIT
300
V
400
1.5 V
5.0 V
1.6 V
1.0
4.0
mA
1.0
4.0
mA
1.0 mA
12 60
6 30
6 35 MHz
0.05 µs
1.0 µs
4.0 µs
0.8 µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.0
UNIT
/W
2







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