POWER TRANSISTORS. TIP31 Datasheet

TIP31 TRANSISTORS. Datasheet pdf. Equivalent

TIP31 Datasheet
Recommendation TIP31 Datasheet
Part TIP31
Description NPN SILICON POWER TRANSISTORS
Feature TIP31; TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with t.
Manufacture Bourns
Datasheet
Download TIP31 Datasheet




Bourns TIP31
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
TIP32 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TIP31
TIP31A
TIP31B
TIP31C
TIP31
TIP31A
TIP31B
TIP31C
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
80
100
120
140
40
60
80
100
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1



Bourns TIP31
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 80 V
VCE = 100 V
VCE = 120 V
VCE = 140 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 375 mA
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 1 A
IC = 3 A
IC = 3 A
IC = 3 A
IC = 0.5 A
IC = 0.5 A
TIP31
TIP31A
TIP31B
TIP31C
TIP31
TIP31A
TIP31B
TIP31C
TIP31/31A
TIP31B/31C
40
60
80
100
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
10
20
3
0.2
0.2
0.2
0.2
0.3
0.3
1
50
1.2
1.8
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 1 A
VBE(off) = -4.3 V
IB(on) = 0.1 A
RL = 30
IB(off) = -0.1 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.5 µs
2 µs
PRODUCT INFORMATION
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.



Bourns TIP31
TIP31, TIP31A, TIP31B, TIP31C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS631AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS631AB
10
1·0
100
10
0·001
0·01
0·1
1·0
IC - Collector Current - A
Figure 1.
0·1
IC = 100 mA
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
10 0·1 1·0 10 100 1000
IB - Base Current - mA
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1 1·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
10
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