Bipolar Transistor. TIP32 Datasheet


TIP32 Transistor. Datasheet pdf. Equivalent


TIP32


High Power Bipolar Transistor
TIP31, TIP32
High Power Bipolar Transistors
Features:
• Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C
• Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A • Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA

TO-220

Pin

1. Base
2. Collector 3. Emitter 4. Collector (Case)

Maximum Ratings

Dimensions
A B C D E F G H I J K L M O

Characteristic

Collector - emitter voltage
Collector - base voltage
Emitter - base voltage Collector current - continuous
- peak Base current Total power dissipation at tc = 25°C derate above 25°C
Operating and storage junction temperature range

Minimum Maximum

14.68

15.31

9.78 10.42

5.01 6.52

13.06

14.62

3.57 4.07

2.42 3.66

1.12 1.36

0.72 0.96

4.22 4.98

1.14 1.38

2.2 2.97

0.33 0.55

2.48 2.98

3.7 3.9

Dimensions : Millimetres

NPN TIP31A TIP32C

PNP TIP32A TIP32C

3 Amperes Complementary Silicon
Power Transistors ...



TIP32
TIP31, TIP32
High Power Bipolar Transistors
Features:
Collector - emitter sustaining voltage - VCEO (sus)
= 60 V (Minimum) - TIP31A, TIP32A
= 100 V (Minimum) - TIP31C, TIP32C
Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A
Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA
TO-220
Pin
1. Base
2. Collector
3. Emitter
4. Collector (Case)
Maximum Ratings
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage
Collector current - continuous
- peak
Base current
Total power dissipation at tc = 25°C
derate above 25°C
Operating and storage junction temperature range
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.2 2.97
0.33 0.55
2.48 2.98
3.7 3.9
Dimensions : Millimetres
NPN
TIP31A
TIP32C
PNP
TIP32A
TIP32C
3 Amperes
Complementary Silicon
Power Transistors
60 - 100 Volts
40 Watts
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, TSTG
TIP31A
TIP32A
TIP31C
TIP32C
60 100
5
3
5
1
40
0.32
-65 to +150
Unit
V
A
W
W/°C
°C
Thermal Characteristics
Characteristic
Symbol
Maximum
Unit
Thermal resistance junction to case
Rθjc
3.125
°C/W
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Page <1>
15/12/11 V1.1

TIP32
TIP31, TIP32
High Power Bipolar Transistors
Figure - 1 Power Derating
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol Minimum Maximum
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC = 30 mA, IB = 0)
TIP31A, TIP32A
TIP31C, TIP32C
Collector cut off current
(VCE = 30V, IB = 0)
(VCE = 60V, IB = 0)
Collector cut off current
(VCE = 60 V, VEB = 0)
(VCE = 100 V, VEB = 0)
Emitter cut off current
(VEB = 5 V, IC = 0)
TIP31A, TIP32A
TIP31C, TIP32C
TIP31A, TIP32A
TIP31C, TIP32C
ON Characteristics (1)
VCEO (SUS)
ICEO
ICES
IEBO
DC current gain
(IC = 1 A, VCE = 4 V)
(IC = 3 A, VCE = 4 V)
Collector - emitter saturation voltage
(IC = 3 A, IB = 375 mA)
Base - emitter on voltage
(IC = 3 A, VCE = 4 V)
Dynamic Characteristics
hFE
VCE (sat)
VBE (on)
Current gain - bandwidth product (2)
(IC = 500 mA, VCE = 10 V, fTEST = 1 KHz)
fT
Small - signal current gain
(IC = 500 A, VCE = 10 V, f = 1 kHz)
hfe
60
100
-
-
-
25
15
-
-
3
20
-
0.3
0.2
1
-
50
1.2
1.8
-
-
Unit
V
mA
-
V
MHz
-
(1) Pulse Test : Pulse width 300 µs, duty cycle 2%
(2) fT = hFE• fTEST
www.element14.com
www.farnell.com
www.newark.com
Page <2>
15/12/11 V1.1




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