Power Transistor. TIP31 Datasheet

TIP31 Transistor. Datasheet pdf. Equivalent

TIP31 Datasheet
Recommendation TIP31 Datasheet
Part TIP31
Description Complementary Silicon Power Transistor
Feature TIP31; SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary.
Manufacture nELL
Datasheet
Download TIP31 Datasheet




nELL TIP31
SEMICONDUCTOR
TIP31 (NPN) Series
TIP32 (PNP) Series RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
3A/40~100V/40W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio hFE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
VCE(sat) = 1.2Vdc (MAX.) @ IC = 3A
Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP31,TIP32
= 60Vdc (Min.) - TIP31A,TIP32A
= 80Vdc (Min.) - TIP31B, TIP32B
= 100Vdc (Min.) - TIP31C, TIP32C
DC Current Gain hFE = 25 (Min.) @ Ic = 1.0A
High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C E TO-220AB
C
B
E
TIP31(NPN)
C
B
E
TIP32(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
E
Collector to base voltage (IE = 0)
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
Collector peak current (tp < 5mS)
Base current
Collector power dissipation
(Derate above 25°C)
Junction temperature
@TC = 25°C
@TA = 25°C
Storage temperature
Unclamped inductive load energy (Note 1)
TIP31
TIP32
40
VALUE
TIP31A TIP31B TIP31C
TIP32A TIP32B TIP32C
60 80 100
UNIT
40 60 80 100 V
5
3
5A
1
40 (0.32)
2.0 (0.016)
W(W/°C)
150
-65 to 150
ºC
32 mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
IC = 1.8A, L = 20mH, RBE = 100Ω, P.R.F = 10Hz, VCC = 20V
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nELL TIP31
SEMICONDUCTOR
TIP31 (NPN) Series
TIP32 (PNP) Series RRooHHSS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
3.1
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Off Characteristics
VCEO(SUS) Collector to emitter sustaining voltage (Note 1) lC = 30mA, IB=0
TIP31,TIP32
TIP31A,TIP32A
TIP31B,TIP32B
ICEO
Collector cutoff current
IEBO Emitter cutoff current
ICES
Collector cutoff current
On Characteristics
TIP31C,TIP32C
VCE = 30V, IB = 0
TIP31,TIP32
TIP31A,TIP32A
VCE = 60V, lB = 0
TIP31B,TIP32B
TIP31C,TIP32C
VEB = 5V, IC = 0
VCE = 40V, VEB = 0 TIP31,TIP32
VCE = 60V, VEB = 0 TIP31A,TIP32A
VCE = 80V, VEB = 0 TIP31B,TIP32B
VCE = 100V, VEB = 0 TIP31C,TIP32C
hFE
VCE(sat)
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage (Note1)
VCE = 4V, IC = 1.0A
VCE = 4V, IC = 3A
lC = 3A, lB = 0.375A
VBE(on) Base to emitter voltage (Note1)
Dynamic Characteristics
lC = 3A, VCE = 4V
fT Current gain - Bandwidth product (note 2)
hfe Small signal current gain
lC = 0.5A, VCE = 10V, ftest = 1MHz
lC = 0.5A, VCE = 10V, f = 1KHz
MIN
40
60
80
100
25
10
3.0
20
UNIT
ºC/W
ºC/W
MAX
V
0.3
mA
1.0
200
200
µA
200
200
75
1.2
V
1.8
MHZ
Note 1. Pulsed : Pulse duration 300 µS, duty cycle ≤ 2.0%.
Note 2. fT = |hfe| • fTEST
Note 3. For PNP type voltage and current are negative.
TC TA
40 4.0
Fig.1 Power derating
30 3.0
20 2.0
TC
10 1.0
TA
00
0
20 40 60 80 100 120 140 160
Temperature (˚C)
Fig 2. Switching Time Equivalent Circuit
TURNON PULSE
APPROX
+11 V
VCC
RC
Vin 0
VEB(off)
APPROX
+11 V
Vin
t1
t3
Vin
R
B
Cjd << Ceb
t1 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
-4.0 V
SCOPE
t2 DUTY CYCLE 2.0%
TURNOFF PULSE APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
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nELL TIP31
SEMICONDUCTOR
Fig.3 Turn-on time
2.0
IC/IB = 10
1.0 TJ = 25°C
0.7 tr @ VCC = 30V
0.5
0.3 tr @ VCC = 10V
0.1
0.07
0.05
0.03
0.02
0.03 0.05
0.1
td @ VEB(off) = 2.0V
0.3 0.5 1.0
3.0
Collector Current, lC (A)
TIP31 (NPN) Series
TIP32 (PNP) Series RRooHHSS
Nell High Power Products
Fig.4 Turn-off time
3.0
2.0
tS
1.0
0.7 tf @ VCC = 30V
0.5
0.3 tf @ VCC = 10V
0.2
IB1= IB2
IC / IB = 10
tS’ = tS - 1/8tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
Collector emitter , IC (A)
Fig.5 Active region safe operating area
10
5.0
5.0ms
100µs
2.0
1.0ms
1.0 Second Breakdown Limited
@ TJ ≤ 150˚C
0.5 Thermal limit @ TJ = 25˚C
(Single pulse)
Bonding wire limit
0.2 CURVES APPLY
TIP31A,TIP32A
TIP31B,TIP32B
BELLOW RATED VCEO TIP31C,TIP32C
0.1
5.0 10 20
50
100
Collector-emitter voltage , VCE (V)
Fig.6 Capacitance
300
TJ = +25°C
200
100
Ceb
70
50 Ccb
30
0.1 0.2 0.3 0.5 1.0
2 3 5 7 10
20 30 40
Reverse voltage, VR (V)
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Sa fe operating area curves indicate lC-VCE
limits of the tra nsistor that must be observe d for re liable
op er at ion ; i.e. , the tran sistor mus t no t be sub jec ted to
The data of fig.5 is based on TJ(pk) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
fo r duty cycles to 10% pro vided TJ(pk) ≤ 150°C TJ(pk) may be
calulated form the data in Figure 13. At high case
temperatures, thermal limitations will reduce the power
that can be handled to valuesless than the limitations
by second breakdown.
Fig.7 Dc current gain
500
300 TJ = 150°C
VCE = 2.0V
100 25°C
70 -55°C
50
30
10
7.0
5.0
0.03 0.05 0.1 0.3 1.0
Collector current, IC (A)
3.0
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