PNP transistors. BD242A Datasheet

BD242A transistors. Datasheet pdf. Equivalent


Part BD242A
Description PNP transistors
Feature PNP BD242 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD242, A, B, C are the PN.
Manufacture Comset Semiconductor
Datasheet
Download BD242A Datasheet


BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTOR BD242A Datasheet
BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching A BD242A Datasheet
BD242A Datasheet
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS BD242A Datasheet
SavantIC Semiconductor Silicon PNP Power Transistors Produc BD242A Datasheet
PNP BD242 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APP BD242A Datasheet
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD2 BD242A Datasheet
Recommendation Recommendation Datasheet BD242A Datasheet




BD242A
PNP BD242 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The NPN complements are BD241, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
IC
IB
PT
TJ
TS
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 100 )
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-5.0
-3
-5
-1
2
40
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
62.5
3.13
Unit
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/3



BD242A
PNP BD242 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=-30 V
ICEO
Collector Cutoff Current
VCE=-30 V
VCE=-60 V
VCE=-60 V
IEBO Emitter Cutoff Current
VBE=-5 V
VCE=-55 V
ICES
Collector Cutoff Current
(VBE = 0)
VCE=-70 V
VCE=-90 V
VCE=-115 V
VCEO(sus)
Collector-Emitter
Voltage (IB = 0) (*)
Sustaining
IC =-30mA
hFE DC Current Gain (*)
VCE=-4 V
IC=-1 A
VCE=-4 V
IC=-3 A
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=-3 A
IB=-0.6 A
VBE(on)
Base-Emitter Voltage (*)
VCE=-4 V
IC=-3 A
VCE=-10 V
IC=-0.5 A
f = 1KHz
hfe Small Signal Current Gain
VCE=-10 V
IC=-0.5 A
f = 1MHz
(*) Pulse Width 300 µs, Duty Cycle 2.0%
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
Min Typ Max Unit
--
-
-
-
-
-0.3 mA
--
--
-
-
-
-
-1.0 mA
--
--
-
-
-
-
-0.2 mA
--
-45
-60
-80
V
-100
25 -
-
-
10 -
-
- - -1.2 V
- - -1.8 V
20 - -
3- - -
23/10/2012
COMSET SEMICONDUCTORS
2/3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)