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BD678AG

Silicon PNP Power Transistor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier appli...

Inchange Semiconductor

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