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BDS12

Part Number	BDS12
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	isc Silicon NPN Power Transistor BDS12 DESCRIPTION ·High Voltage: VCEV= 100V(Min) ·Low Saturation Voltage- : VCE(sat)=...
Datasheet	BDS12 PDF File

Overview

isc Silicon NPN Power Transistor BDS12 DESCRIPTION ·High Voltage: VCEV= 100V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 5A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEV Collector-Emitter Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current 5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature R...

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