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PTFB183404F

Part Number	PTFB183404F
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistors
Published	Nov 27, 2016
Detailed Description	PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404...
Datasheet	PTFB183404F PDF File

Overview

PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.
6A, ƒ = 1880 MHz, 3G...

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