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PTFB192503FL

Infineon Technologies

Thermally-Enhanced High Power RF LDMOS FETs


Description
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and ...



Infineon Technologies

PTFB192503FL

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