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PTVA120501EA

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this de...



Infineon

PTVA120501EA

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