Silicon N-Channel Power MOSFET
CS2N60F A9H
○R
General Description:
VDSS
600 V
CS2N60F A9H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performance and enhance the avalanche energy. The transistor can
be used ...