Silicon N-Channel Power MOSFET
CS3N50 B4HY
○R
General Description：
VDSS
500 V
CS3N50 B4HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.4 Ω
performance and enhance the avalanche energy. The transistor
can be us...
