(PDF) BSC500N20NS3G Datasheet PDF | Infineon





BSC500N20NS3G Datasheet PDF

Part Number BSC500N20NS3G
Description Power-Transistor
Manufacture Infineon
Total Page 9 Pages
PDF Download Download BSC500N20NS3G Datasheet PDF

Features: Datasheet pdf BSC500N20NS3 G OptiMOSTM3 Power-Transis tor Features • N-channel, normal leve l • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e R DS(on) Product Summary VDS RDS(on) ,max ID • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Hal ogen-free according to IEC61249-2-21 Ideal for high-frequency switching a nd synchronous rectification Type BSC 500N20NS3 200 V 50 mW 24 A Package Ma rking PG-TDSON-8 500N20NS Maximum rat ings, at T j=25 °C, unless otherwise s pecified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single puls e ID I D,pulse E AS T C=25 °C T C=10 0 °C T C=25 °C I D=22 A, R GS=25 W R everse diode dv /dt dv /dt Gate sourc e voltage V GS Power dissipation P t ot T C=25 °C Operating and storage te mperature T j, T stg IEC climatic cate gory; DIN IEC 68-1 1)J-STD20 and JESD2 2 2) See figure 3 Value 24 17 97 120 50 ±20 96 -55 ... 150 55.

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BSC500N20NS3G datasheet
BSC500N20NS3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
BSC500N20NS3
200 V
50 mW
24 A
Package
Marking
PG-TDSON-8
500N20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=22 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
24
17
97
120
50
±20
96
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2013-02-21

BSC500N20NS3G datasheet
BSC500N20NS3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.3 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=60 µA
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
200
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=160 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=22 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=22 A
-
-
-
-
19
10 100
1 100 nA
42 50 mW
1.9 - W
37 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2013-02-21




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