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BU912

Inchange Semiconductor

Silicon NPN Darlington Power Transistor


Description
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM ...



Inchange Semiconductor

BU912

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