N-Channel Enhancement Mode Field Effect Transistor
Description
CJ8820
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION The CJ8820 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
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