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HFI7N80
800V N-Channel MOSFET
Description
HFW7N80_HFI7N80 Dec 2015 HFW7N80 / HFI7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Are...
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HFI7N80
800V N-Channel MOSFET
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