STGB4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 4 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel d...
