PTD2N60/PTU2N60
600V N-Channel MOSFET
Features
1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
General Description
This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology. This advanced technology has been especially t...
