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STD11N60DM2

STMicroelectronics
Part Number STD11N60DM2
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Jan 7, 2017
Detailed Description STD11N60DM2 Datasheet N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, T...
Datasheet PDF File STD11N60DM2 PDF File

STD11N60DM2
STD11N60DM2

Overview
STD11N60DM2 Datasheet N-channel 600 V, 370 mΩ typ.
, 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS @ TJmax RDS(on)max.
ID STD11N60DM2 650 V 420 mΩ 10 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected PTOT 110 W Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-...


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