FDMS4435BZ P-Channel Power Trench® MOSFET
FDMS4435BZ
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current han...
