MOSFET. FDME820NZT Datasheet

FDME820NZT Datasheet PDF, Equivalent


Part Number

FDME820NZT

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDME820NZT Datasheet PDF


FDME820NZT Datasheet
October 2013
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
„ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
„ Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
„ Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level >2.5 kV (Note3)
„ RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
Applications
„ Li-lon Battery Pack
„ Baseband Switch
„ Load Switch
„ DC-DC Conversion
G
D
Pin 1 D
S
DD
S
D
D
DD
GS
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
9
40
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
70
190
°C/W
Device Marking
8T
Device
FDME820NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
1
www.fairchildsemi.com

FDME820NZT Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
20 V
20 mV/°C
1 μA
±10 μA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 4.5 V, ID = 9 A
VGS = 2.5 V, ID = 7.5 A
VGS = 1.8 V, ID = 7 A
VGS = 4.5 V, ID = 9 A ,
TJ = 125 °C
0.5 0.8 1.0
V
-3 mV/°C
14 18
17 24
26 32 mΩ
19 24
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
865 pF
203 pF
190 pF
1.0 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 4 A
VGS = 4.5 V, RGEN = 2 Ω
VDD = 4.2 V, ID = 3 A, VGS = 4.3 V
VDD = 4.2 V, ID = 3 A, VGS = 4.5 V
VDD = 10 V, ID = 9 A
9
5
19
5
8.0
8.5
1.4
3.2
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 1.6 A
VGS = 0 V, IS = 9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9 A, di/dt = 100 A/us
0.7 1.2
V
0.8 1.2
V
18 ns
4 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 190 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
2
www.fairchildsemi.com


Features Datasheet pdf FDME820NZT N-Channel PowerTrench® MOSFE T October 2013 FDME820NZT N-Channel P owerTrench® MOSFET 20 V, 9 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A „ Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A „ Max r DS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A „ Low profile: 0.55 mm maximum in th e new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and ant imony oxides „ HBM ESD protection leve l >2.5 kV (Note3) „ RoHS Compliant Ge neral Description This Single N-Channel MOSFET has been designed using Fairchi ld Semiconductor’s advanced Power Tre nch process to optimize the rDS(ON) @ V GS = 1.8 V on special MicroFET leadfram e. Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC -DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1. 6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continu.
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