MOSFET. FDMA86251 Datasheet

FDMA86251 Datasheet PDF, Equivalent


Part Number

FDMA86251

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDMA86251 Datasheet


FDMA86251 Datasheet
October 2015
FDMA86251
Single N-Channel PowerTrench® MOSFET
150 V, 2.4 A, 175 mΩ
Features
General Description
„ Max rDS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A
„ Max rDS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Applications
„ DC – DC Primary Switch
„ Load Switch
Pin 1
Drain
DD G
Source
Bottom Drain Contact
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Curre -Continuous
-Pulsed
Parameter
TA = 25 °C
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2.4
12
13
2.4
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
251
Device
FDMA86251
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMA86251 Rev.1.1
1
www.fairchildsemi.com

FDMA86251 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
150
V
ID = 250 μA, referenced to 25 °C
108 mV/°C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.0 2.8 4.0
V
ID = 250 μA, referenced to 25 °C -9 mV/°C
VGS = 10 V, ID = 2.4 A
VGS = 6 V, ID = 2.0 A
VGS = 10 V, ID = 2.4 A,
TJ = 125 °C
VDD = 5 V, ID = 2.4 A
148 175
175 237 mΩ
272 333
4.7 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
259 363
pF
24 34 pF
1.5 2.4 pF
0.1 1.5 3.0
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75V, ID = 2.4 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V VDD = 75 V,
ID = 2.4 A
5.9 12 ns
1.7 10 ns
10 20 ns
2.3 10 ns
4.1 5.8 nC
2.7 3.8 nC
1.2 nC
1.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.4 A
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 2.4 A, di/dt = 100 A/μs
0.8 1.2
V
49 79 ns
38 61 nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: EAS of 13 mJ is based on starting TJ = 25 oC, L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V. 100% tested at L = 0.3 mH, IAS = 8 A.
4: Pulsed Id please refer to Fig 9 SOA graph for more details.
©2015 Fairchild Semiconductor Corporation
FDMA86251 Rev.1.1
2
www.fairchildsemi.com


Features Datasheet pdf FDMA86251 Single N-Channel PowerTrench® MOSFET October 2015 FDMA86251 Single N-Channel PowerTrench® MOSFET 150 V, 2.4 A, 175 mΩ Features General Descr iption „ Max rDS(on) = 175 mΩ at VGS = 10 V, ID = 2.4 A „ Max rDS(on) = 23 7 mΩ at VGS = 6 V, ID = 2.0 A „ Low P rofile - 0.8 mm maximum in the new pack age MicroFET 2x2 mm „ Free from haloge nated compounds and antimony oxides „ RoHS Compliant This device has been de signed to provide maximum efficiency an d thermal performance for synchronous b uck converters. The low rDS(on) and gat e charge provide excellent switching pe rformance. Applications „ DC – DC Pr imary Switch „ Load Switch Pin 1 Drai n DD G Source Bottom Drain Contact DD DD DD S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VG S ID Drain to Source Voltage Gate to S ource Voltage Drain Curre -Continuous - Pulsed Parameter TA = 25 °C EAS PD T J, TSTG Single Pulse Avalanche Energy Power Dissipation TA =.
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