MOSFET. FDME910PZT Datasheet

FDME910PZT Datasheet PDF, Equivalent


Part Number

FDME910PZT

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
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FDME910PZT Datasheet
FDME910PZT
P-Channel PowerTrench® MOSFET
-20 V, -8 A, 24 mΩ
Features
„ Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
„ Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
„ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
„ Low profile: 0.55 mm maximum in the new package MicroFET
1.6x1.6 Thin
„ HBM ESD protection level > 2 kV typical (Note 3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
February 2015
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 1.6x1.6 Thin
package offers exceptional thermal performance for its physical
size and is well suited to switching and linear mode applications.
G
D
D
Pin 1
S
S
D
D
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-8
-32
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1a)
60
175
°C/W
Device Marking
E91
Device
FDME910PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C3
1
www.fairchildsemi.com

FDME910PZT Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
-20
V
ID = -250 μA, referenced to 25 °C -16 mV/°C
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1 μA
±10 μA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
-0.4 -0.6 -1.5
V
ID = -250 μA, referenced to 25 °C 2.7 mV/°C
VGS = -4.5 V, ID = -8 A
VGS = -2.5 V, ID = -7 A
VGS = -1.8 V, ID = -6 A
VGS = -4.5 V, ID = -8 A,TJ = 125°C
VDD = -5 V, ID = -8 A
20 24
25 31
mΩ
32 45
26 36
38 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
1586
236
218
2110
355
330
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -8 A,
VGS = -4.5 V, RGEN = 6 Ω
VGS = -4.5 V, VDD = -10 V,
ID = -8 A
9 18 ns
11 20 ns
87 139 ns
46 74 ns
15 21 nC
2.2 nC
3.6 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = - 8 A
VGS = 0 V, IS = -1.8 A
(Note 2) -0.57
(Note 2)
-0.8
-0.7
-1.2
-1.2
V
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -8 A, di/dt = 100 A/μs
17 31 ns
4.1 10 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDME910PZT P-Channel PowerTrench® MOSFE T FDME910PZT P-Channel PowerTrench® M OSFET -20 V, -8 A, 24 mΩ Features „ M ax rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A „ Low profile: 0.55 mm maximum in the new pac kage MicroFET 1.6x1.6 Thin „ HBM ESD p rotection level > 2 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant Feb ruary 2015 General Description This dev ice is designed specifically for batter y charging or load switching in cellula r handset and other ultraportable appli cations. It features a MOSFET with low on-state resistance and zener diode pro tection against ESD. The MicroFET 1.6x1 .6 Thin package offers exceptional ther mal performance for its physical size a nd is well suited to switching and line ar mode applications. G D D Pin 1 S S D D Bottom Drain Contact D1 6D D2 5D G3 4S BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximu.
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