MOSFET. FDPF085N10A Datasheet

FDPF085N10A Datasheet PDF, Equivalent


Part Number

FDPF085N10A

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDPF085N10A Datasheet PDF


FDPF085N10A Datasheet
FDPF085N10A
N-Channel PowerTrench® MOSFET
100 V, 40 A, 8.5 mΩ
November 2013
Features
• RDS(on) = 6.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF085N10A
100
±20
40
28
160
269
6.0
33.3
0.22
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF085N10A
4.5
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. C1
1
www.fairchildsemi.com

FDPF085N10A Datasheet
Package Marking and Ordering Information
Part Number
FDPF085N10A
Top Mark
FDPF085N10A
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 96 A
VDS = 10 V, ID = 96 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VGS = 10 V, VDS = 50 V,
ID = 96 A
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.07
-
-
-
-
6.5
76
2025
468
20
752
31
9.7
5.0
7.5
0.97
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
8.5 mΩ
-S
2695
620
-
-
40
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 96 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 96 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDD = 50 V,VGS = 0 V, ISD = 96 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 40 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
18 46 ns
22 54 ns
29 68 ns
8 26 ns
- 40 A
- 160 A
- 1.3 V
59 - ns
80 - nC
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDPF085N10A — N-Channel PowerTrench® MOSFET FDPF085N10A N-Channel PowerTren ch® MOSFET 100 V, 40 A, 8.5 mΩ Novem ber 2013 Features • RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A • Fa st Switching Speed • Low Gate Charge, QG = 31 nC (Typ.) • High Performance Trench Technology for Extremely Low RD S(on) • High Power and Current Handli ng Capability • RoHS Compliant Descr iption This N-Channel MOSFET is produce d using Fairchild Semiconductor’s adv anced PowerTrench® process that has be en tailored to minimize the on-state re sistance while maintaining superior swi tching performance. Applications • Co nsumer Appliances • LED TV • Synchr onous Rectification for ATX / Sever / T elecom PSU • Motor Drives and Uninter ruptible Power Supplies • Micro Solar Inverter D GDS TO-220F G S Absolut e Maximum Ratings TC = 25oC unless othe rwise noted. Symbol VDSS VGSS ID IDM E AS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -.
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