MOSFET. FDMS0310S Datasheet

FDMS0310S Datasheet PDF, Equivalent


Part Number

FDMS0310S

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS0310S Datasheet


FDMS0310S Datasheet
FDMS0310S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 mΩ
Features
General Description
January 2015
„ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
„ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFETTM Schottky Body Diode
„ MSL1 robust package design
The FDMS0310S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ 100% UIL tested
„ Synchronous Rectifier for DC/DC Converters
„ RoHS Compliant
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Desktop
Top
Bottom
Pin 1
S D5
4G
SSG
D6
3S
Power 56
D
DDD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
33
±20
42
83
19
90
60
46
2.5
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.7
50
°C/W
Device Marking
FDMS0310S
Device
FDMS0310S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS0310S Rev.C3
1
www.fairchildsemi.com

FDMS0310S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
18 mV/°C
500 μA
100 nA
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.9 3.0
V
ID = 10 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 18 A, TJ = 125 °C
VDS = 5 V, ID = 18 A
3.2 4.0
4.3 5.2 mΩ
4.1 5.2
97 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2120
735
90
1.1
2820
975
135
2.2
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 18 A
12 21 ns
5 10 ns
28 44 ns
4 10 ns
33 46 nC
15 22 nC
6.5 nC
4.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 18 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 18 A, di/dt = 300 A/μs
0.48 0.7
0.80 1.2
26 42
26 42
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0310S Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDMS0310S N-Channel PowerTrench® SyncFE TTM FDMS0310S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description January 2015 „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, I D = 18 A „ Max rDS(on) = 5.2 mΩ at VG S = 4.5 V, ID = 14 A „ Advanced Packag e and Silicon combination for low rDS(o n) and high efficiency „ SyncFETTM Sch ottky Body Diode „ MSL1 robust package design The FDMS0310S has been designe d to minimize losses in power conversio n application. Advancements in both sil icon and package technologies have been combined to offer the lowest rDS(on) w hile maintaining excellent switching pe rformance. This device has the added be nefit of an efficient monolithic Schott ky body diode. Applications „ 100% UI L tested „ Synchronous Rectifier for DC/DC Converters „ RoHS Compliant „ Notebook Vcore/ GPU low side switch Networking Point of Load low side swi tch „ Desktop Top Bottom Pin 1 S D5 4G SSG D6 3S Power 56 D DDD D7 D8 2S 1S MOSFET Maxi.
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