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FCPF650N80Z

MOSFET

Description

FCPF650N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 mΩ Features RDS(on) = 530 mΩ (Typ.) Ultra Low Gate Charge (Typ. Qg = 27 nC) Low Eoss (Typ. 2.8 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability ...

Fairchild Semiconductor

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