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TC511001J-12 Datasheet, Equivalent, DRAM.

DRAM

DRAM

 

 

 

Part TC511001J-12
Description DRAM
Feature TOSHIBA MOS MEMORY PRODUCT 1,048,576 WO RDS X 1 BIT DYNAMIC RAM SILICON GATE CM OS DESCRIPTION TC511001 P/J/Z-S5, TC51 1001 P/J/Z-l0 TC511 001 P/J/Z-12 The T C5ll00lP/J/Z is the new generation dyna mic R&~ organized 1,048,576 ~vords by 1 bit.
The TC5ll00lP/J/Z utilizes TOSHIB A's caos Silicon gate process technolog y as well as advanced circuit technique s to provide wide operating margins, bo th internally and to the system user.
M ultiplexed address inputs permit the TC 5ll00lP/J/Z to be packaged in a standar d 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The pac kage size prov .
Manufacture Toshiba
Datasheet
Download TC511001J-12 Datasheet
Part TC511001J-12
Description DRAM
Feature TOSHIBA MOS MEMORY PRODUCT 1,048,576 WO RDS X 1 BIT DYNAMIC RAM SILICON GATE CM OS DESCRIPTION TC511001 P/J/Z-S5, TC51 1001 P/J/Z-l0 TC511 001 P/J/Z-12 The T C5ll00lP/J/Z is the new generation dyna mic R&~ organized 1,048,576 ~vords by 1 bit.
The TC5ll00lP/J/Z utilizes TOSHIB A's caos Silicon gate process technolog y as well as advanced circuit technique s to provide wide operating margins, bo th internally and to the system user.
M ultiplexed address inputs permit the TC 5ll00lP/J/Z to be packaged in a standar d 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The pac kage size prov .
Manufacture Toshiba
Datasheet
Download TC511001J-12 Datasheet

TC511001J-12

TC511001J-12
TC511001J-12

TC511001J-12

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