MOSFET. FDA33N25 Datasheet

FDA33N25 MOSFET. Datasheet pdf. Equivalent

Part FDA33N25
Description MOSFET
Feature FDA33N25 — N-Channel UniFETTM MOSFET FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features.
Manufacture Fairchild Semiconductor
Datasheet
Download FDA33N25 Datasheet



FDA33N25
FDA33N25
N-Channel UniFETTM MOSFET
250 V, 33 A, 94 mΩ
Features
• RDS(on) = 88 mΩ (Typ.) @ VGS = 10 V, ID =16.5 A
• Low Gate Charge (Typ. 36 nC)
• Low Crss (Typ. 35 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
May 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDA33N25
250
±30
33
21
132
918
33
24.6
4.5
245
1.96
-55 to +150
300
FDA33N25
0.51
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. C3
1
www.fairchildsemi.com



FDA33N25
Package Marking and Ordering Information
Part Number
FDA33N25
Top Mark
FDA33N25
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 16.5 A
VDS = 20 V, ID = 16.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 200 V, ID = 33 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 125 V, ID = 33 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 33 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 33 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.35 mH, IAS = 33 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 33 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical Characteristics
Min.
250
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
0.34
-
-
-
-
-
1
10
±100
V
V/oC
μA
nA
-
0.088
24.2
5.0
0.094
-
V
Ω
S
1655
315
35
36
10.8
16
2200
420
55
46.8
-
-
pF
pF
pF
nC
nC
nC
33 76 ns
142 293 ns
77 165 ns
68 146 ns
- 33 A
- 132 A
- 1.4 V
256 - ns
2.3 - μC
©2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. C3
2
www.fairchildsemi.com







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