MOSFET. FDA38N30 Datasheet

FDA38N30 MOSFET. Datasheet pdf. Equivalent

Part FDA38N30
Description MOSFET
Feature FDA38N30 — N-Channel UniFETTM MOSFET FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features.
Manufacture Fairchild Semiconductor
Datasheet
Download FDA38N30 Datasheet




FDA38N30
FDA38N30
N-Channel UniFETTM MOSFET
300 V, 38 A, 85 mΩ
Features
• RDS(on) = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 60 pF)
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
May 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDA38N30
300
±30
38
22
150
1200
38
31
4.5
312
2.5
-55 to +150
300
FDA38N30
0.4
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C2
1
www.fairchildsemi.com



FDA38N30
Package Marking and Ordering Infomation
Part Number
FDA38N30
Top Mark
FDA38N30
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
On Characteristics
VDS = 300 V, VGS = 0 V
VDS = 240 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 19 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 20 V, ID = 19 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Qg(tot)
Total Gate Charge at 10V
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
Switching Characteristics
VDS = 240 V, ID = 38 A,
VGS = 10 V
(Note 4)
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Drain-Source Diode Characteristics
VDD = 150 V, ID = 38 A,
RG = 25 Ω, VGS = 10 V
(Note 4)
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Min.
300
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max Unit
- -V
0.3 - V/°C
-1
- 10 μA
- ±100 nA
- 5.0
0.070 0.085
6.3 -
V
Ω
S
2600
500
60
60
17
28
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
53 69 ns
110 143 ns
118 153 ns
54 70 ns
- 38 A
- 150 A
- 1.4 V
315 - ns
4.0 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, IAS = 38 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 38 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C2
2
www.fairchildsemi.com







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