MOSFET. FQA13N80_F109 Datasheet

FQA13N80_F109 MOSFET. Datasheet pdf. Equivalent

Part FQA13N80_F109
Description MOSFET
Feature FQA13N80_F109 — N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ .
Manufacture Fairchild Semiconductor
Datasheet
Download FQA13N80_F109 Datasheet




FQA13N80_F109
FQA13N80_F109
N-Channel QFET® MOSFET
800 V, 12.6 A, 750 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 12.6 A, 800 V, RDS(on) = 750 m(Max.) @ VGS = 10 V,
ID = 6.3 A
• Low Gate Charge (Typ. 68 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQA13N80_F109
800
12.6
8.0
50.4
± 30
1100
12.6
30
4.0
300
2.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA13N80_F109
0.42
0.24
40
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C2
1
www.fairchildsemi.com



FQA13N80_F109
Package Marking and Ordering Information
Part Number
FQA13N80_F109
Top Mark
FQA13N80
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
BVDSS
/ TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA,
Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.3A
VDS = 50 V, ID = 6.3A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 12.6A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 12.6A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.6 A,
dIF / dt = 100 A/µs

1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13 mH, IAS = 12.6 A, VDD = 50 V, RG = 25 , Starting TJ = 25oC
3. ISD 12.6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
Min
800
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.95
--
--
--
--
--
0.58
13
2700
275
30
60
150
155
110
68
15
32
--
--
--
850
11.3
Max Unit
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
0.75
-- S
3500
360
39
pF
pF
pF
130 ns
310 ns
320 ns
230 ns
88 nC
-- nC
-- nC
12.6 A
50.4 A
1.4 V
-- ns
-- µC
©2007 Fairchild Semiconductor Corporation
FQA13N80_F109 Rev. C2
2
www.fairchildsemi.com







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