FQA8N80C_F109 | Fairchild Semiconductor

MOSFET
FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSF.

MOSFET
FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant November 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s.

Download FQA8N80C_F109 Datasheet

FQA8N80C_F109 | Fairchild Semiconductor: MOSFET; Download FQA8N80C_F109 Datasheet; Download FQA8N80C_F109 Datasheet; FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(.; FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant November 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This.

FQA8N80C_F109

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