MOSFET. FQA8N100C Datasheet

FQA8N100C MOSFET. Datasheet pdf. Equivalent

Part FQA8N100C
Description MOSFET
Feature FQA8N100C — N-Channel QFET® MOSFET FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.45 Ω Features • .
Manufacture Fairchild Semiconductor
Datasheet
Download FQA8N100C Datasheet




FQA8N100C
FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
• RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 53 nC)
Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N100C
1000
8
5
32
±30
850
8
22.5
4.0
225
1.79
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA8N100C
0.56
0.24
40
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com



FQA8N100C
Package Marking and Ordering Information
Part Number
FQA8N100C
Top Mark
FQA8N100C
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 1000V, VGS = 0V
VDS = 800V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4A
1000
--
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50V, ID = 4A
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDD = 500V, ID = 8A
RG = 25
VDS = 800V, ID = 8A
VGS = 10V
--
--
--
--
(Note 4)
(Note 4)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 8A
dIF/dt =100A/µs
--
--
--
--
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 8 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
1.4
--
--
--
--
--
1.2
8.0
2475
195
16
50
95
122
80
53
13
23
--
--
--
620
5.2
Max. Unit
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0
1.45
--
V
S
3220
255
24
pF
pF
pF
110 ns
200 ns
254 ns
170 ns
70 nC
-- nC
-- nC
8A
32 A
1.4 V
-- ns
-- µC
©2005 Fairchild Semiconductor Corporation
FQA8N100C Rev C1
2
www.fairchildsemi.com







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