MOSFET. FCH130N60 Datasheet

FCH130N60 MOSFET. Datasheet pdf. Equivalent

Part FCH130N60
Description MOSFET
Feature FCH130N60 — N-Channel SuperFET® II MOSFET July 2014 FCH130N60 N-Channel SuperFET® II MOSFET 600 V,.
Manufacture Fairchild Semiconductor
Datasheet
Download FCH130N60 Datasheet



FCH130N60
July 2014
FCH130N60
N-Channel SuperFET® II MOSFET
600 V, 28 A, 130 m
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 112 m
• Ultra Low Gate Charge (Typ. Qg = 54 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
 (Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH130N60 Rev. C2
1
FCH130N60
600
±20
±30
28
18
84
720
6
2.78
100
20
278
2.2
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH130N60
0.45
40
Unit
oC/W
www.fairchildsemi.com



FCH130N60
Package Marking and Ordering Information
Part Number
FCH130N60
Top Mark
FCH130N60
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25C
VGS = 0 V, ID = 10 mA, TJ = 150C
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
600
650
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 14 A
VDS = 20 V, ID = 14 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 380 V, VGS = 0 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 14 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
Typ.
-
-
0.67
-
2.5
-
-
112
26
2700
65
2.85
240
54
12
14
1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 14 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 14 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 14 A,
dIF/dt = 100 A/s
(Note 4)
-
-
-
-
-
-
-
-
-
25
16
65
4
-
-
-
376
7.6
Quantity
30 units
Max. Unit
-
-
-
1
-
±100
V
V/oC
A
nA
3.5 V
130 m
-S
3590
85
-
-
70
-
-
-
pF
pF
pF
pF
nC
nC
nC
60 ns
42 ns
140 ns
18 ns
28 A
84 A
1.2 V
- ns
- C
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 6 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 14 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2014 Fairchild Semiconductor Corporation
FCH130N60 Rev. C2
2
www.fairchildsemi.com







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