IGBT. FGP5N60LS Datasheet

FGP5N60LS IGBT. Datasheet pdf. Equivalent

Part FGP5N60LS
Description IGBT
Feature FGP5N60LS — 600 V, 5 A Field Stop IGBT FGP5N60LS 600 V, 5 A Field Stop IGBT Features • High Current.
Manufacture Fairchild Semiconductor
Datasheet
Download FGP5N60LS Datasheet



FGP5N60LS
FGP5N60LS
600 V, 5 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A
• High Input Impedance
• RoHS Compliant
Applications
• HID Ballast
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop IGBTs offer the optimum performance for HID ballast
where low conduction losses are essential.
C
GCE
TO-220
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width = 100 usec , Duty = 0.2, VGE = 13.5 V
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
20
10
5
36
83
33
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
1.5
62.5
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
1
www.fairchildsemi.com



FGP5N60LS
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGP5N60LS
FGP5N60LS
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
IC = 250 A, VCE = VGE
IC = 5 A, VGE = 15 V
IC = 5 A, VGE = 15 V,
TC = 125oC
IC = 14 A, VGE = 12 V
IC = 14 A, VGE = 12 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 5 A,
RG = 10, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 5 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 5 A,
VGE = 15 V
600 - - V
- 0.8 - V/oC
- - 250 A
-
-
±400
nA
2.7 3.9 4.5
- 1.7 2.1
- 1.8 -
- 2.7 3.2
- 3.1 -
V
V
V
V
V
- 278 -
- 28 -
- 11 -
pF
pF
pF
- 4.3 -
- 1.6 -
- 36 -
- 118 -
- 38 -
- 130 -
- 168 -
- 4.1 -
- 1.8 -
- 37 -
- 150 -
- 80 -
- 168 -
- 248 -
- 18.3 -
- 1.6 -
- 7.9 -
ns
ns
ns
ns
J
J
J
ns
ns
ns
ns
J
J
J
nC
nC
nC
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
2
www.fairchildsemi.com







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