IGBT. FGPF4565 Datasheet

FGPF4565 IGBT. Datasheet pdf. Equivalent

Part FGPF4565
Description IGBT
Feature FGPF4565 — 650 V Field Stop Trench IGBT FGPF4565 650 V Field Stop Trench IGBT Features • High Curre.
Manufacture Fairchild Semiconductor
Datasheet
Download FGPF4565 Datasheet




FGPF4565
FGPF4565
650 V Field Stop Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.5 V(Typ.) @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• IPL (Intense Pulsed Light)
November 2014
General Description
Using innovative field stop IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for IPL (Intense Pulsed Light).
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC pulse (1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Notes:
1. Half sine wave: D< 0.01, pulse width < 1usec,
* Ic pulse limit by max Tj
Ratings
650
± 25
170
30
12
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Unit
V
V
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
1
www.fairchildsemi.com



FGPF4565
Package Marking and Ordering Information
Part Number
FGPF4565
Top Mark
FGPF4565
Package Packing Method Reel Size
TO-220F
Tube
N/A
Tape Width
N/A
Quantity
50
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES/
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 μA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V,
TC = 150oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 30 A,
RG = 5 Ω, VGE = 15 V,
Resistive Load, TC = 25oC
VCC = 400 V, IC = 30 A,
RG = 5 Ω, VGE = 15 V,
Resistive Load, TC = 150oC
VCE = 400 V, IC = 30 A,
VGE = 15 V
650 - - V
- 0.65 - V/oC
- - 250 μA
-
-
±400
nA
3.0 4.0 5.0
- 1.35 -
- 1.50 1.88
- 1.75 -
V
V
V
V
- 1650 -
- 34 -
- 17 -
pF
pF
pF
- 11.2 -
- 44.8 -
- 40.8 -
- 153 -
- 12.8 -
- 59.2 -
- 40.8 -
- 202 -
- 40.3 -
- 8.8 -
- 10.4 -
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
2
www.fairchildsemi.com







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