IGBT. FGH30N60LSD Datasheet

FGH30N60LSD IGBT. Datasheet pdf. Equivalent

Part FGH30N60LSD
Description IGBT
Feature FGH30N60LSD — 600 V, 30 A PT IGBT FGH30N60LSD 600 V, 30 A PT IGBT Features • Low Saturation Voltage.
Manufacture Fairchild Semiconductor
Datasheet
Download FGH30N60LSD Datasheet



FGH30N60LSD
FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
November 2013
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
G
CE
TO-247
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IFSM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
Ratings
600
20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.26
0.92
40
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
1
www.fairchildsemi.com



FGH30N60LSD
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH30N60LSDTU FGH30N60LSD TO-247
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 uA
VGE = 0 V, IC = 250 uA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250 uA, VCE = VGE
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V,
TC = 125C
IC = 60 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 400 V, IC = 30 A,
RG = 6.8 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 400 V, IC = 30 A,
RG =6.8 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 600 V, IC = 30 A,
VGE = 15 V
Measured 5mm from PKG
600 --
--
V
-- 0.6 -- V/C
-- -- 250 uA
-- -- ±250 nA
4.0 5.5 7.0
-- 1.1 1.4
-- 1.0 --
-- 1.3 --
V
V
V
V
-- 3550 --
-- 245 --
-- 90 --
pF
pF
pF
-- 18 -- ns
-- 46 -- ns
-- 250 --
ns
-- 1.3 2.0 us
-- 1.1 -- mJ
-- 21 -- mJ
-- 17 -- ns
-- 45 -- ns
-- 270 --
ns
-- 2.6 --
us
-- 1.1 -- mJ
-- 36 -- mJ
-- 225 --
nC
-- 30 -- nC
-- 105 --
nC
-- 7 -- nH
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
2
www.fairchildsemi.com







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