IGBT. FGH25N120FTDS Datasheet

FGH25N120FTDS IGBT. Datasheet pdf. Equivalent

Part FGH25N120FTDS
Description IGBT
Feature FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT November 2013 FGH25N120FTDS 1200 V, 25 A Field.
Manufacture Fairchild Semiconductor
Datasheet
Download FGH25N120FTDS Datasheet




FGH25N120FTDS
November 2013
FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer the optimum performance for hard switching
application such as solar inverter, UPS, welder and PFC appli-
cations.
C
G
CE
TO-247
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
@ TC = 25oC
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C1
1
G
E
Ratings
1200
± 25
50
25
75
50
25
75
313
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.4
1.25
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGH25N120FTDS
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH25N120FTDS FGH25N120FTDS TO-247
Tube
Reel Size
N/A
Tape Width Quantity
N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 A
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 25 mA, VCE = VGE
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600 V, IC = 25 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 600 V, IC = 25 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 600 V, IC = 25 A,
VGE = 15 V
1200
-
-
--V
- 1 mA
-
±250
nA
3.5 6 7.5
- 1.6 2
- 1.92 -
V
V
V
- 4090 -
- 135 -
- 75 -
pF
pF
pF
-
26 35
ns
-
41 53
ns
-
151 196
ns
-
102 132
ns
-
1.42 1.84
mJ
- 1.16 1.5 mJ
-
2.58 3.34
mJ
- 22 - ns
- 41 - ns
- 163 -
ns
- 136 -
ns
- 2.04 -
mJ
- 1.58 -
mJ
- 3.62 -
mJ
-
169 225
nC
- 33 44 nC
- 78 104 nC
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C1
2
www.fairchildsemi.com







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