IGBT. FGA40T65SHDF Datasheet

FGA40T65SHDF IGBT. Datasheet pdf. Equivalent

Part FGA40T65SHDF
Description IGBT
Feature FGA40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGA40T65SHDF 650 V, 40 A Field Stop Trench IGBT .
Manufacture Fairchild Semiconductor
Datasheet
Download FGA40T65SHDF Datasheet




FGA40T65SHDF
FGA40T65SHDF
650 V, 40 A Field Stop Trench IGBT
April 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
C
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 , Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
G
E
FGA40T65SHDF
650
20
30
80
40
120
120
40
20
60
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
1
www.fairchildsemi.com



FGA40T65SHDF
Thermal Characteristics
Symbol
RJC (IGBT)
RJC (Diode)
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGA40T65SHDF
0.56
1.75
40
Package Marking and Ordering Information
Part Number
FGA40T65SHDF
Top Mark Package Packing Method Reel Size Tape Width
FGA40T65SHDF TO-3PN
Tube
--
Unit
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
VGE = 0 V, IC = 1mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
ITCC==4107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V2,5oC
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V1,75oC
650 - - V
- 0.6 - V/oC
- - 250 A
-
-
400
nA
4.0 5.5 7.5
- 1.45 1.81
- 1.8 -
V
V
V
- 1982 -
- 70 -
- 25 -
pF
pF
pF
- 18 -
- 27 -
- 64 -
- 3-
- 1.22 -
- 0.44 -
- 1.66 -
- 18 -
- 31 -
- 70 -
- 56 -
- 1.78 -
- 0.78 -
- 2.56 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
2
www.fairchildsemi.com







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