IGBT. FGA15N120ANTDTU Datasheet

FGA15N120ANTDTU IGBT. Datasheet pdf. Equivalent

Part FGA15N120ANTDTU
Description IGBT
Feature FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Feature.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA15N120ANTDTU Datasheet




FGA15N120ANTDTU
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V
@ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ
@ IC = 15 A and TC = 25C
• Extremely Enhanced Avalanche Capability
November 2013
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25C
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case for IGBT
RJC
Thermal Resistance, Junction-to-Case for Diode
RJA
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
1200
20
30
15
45
30
15
45
186
74
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.67
2.88
40
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTDTU Rev. C1
1
www.fairchildsemi.com



FGA15N120ANTDTU
Package Marking and Ordering Information
Part Number
Top Mark Package
FGA15N120ANTDTU_F109 FGA15N120ANTDTU TO-3P
Packing
Method
Tube
Reel Size Tape Width Quantity
N/A N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
IC = 15 mA, VCE = VGE
IC = 15 A, VGE = 15 V
IC = 15 A, VGE = 15 V,
TC = 125C
IC = 30 A, VGE = 15 V
VCE = 30 V, VGE = 0 V,
f = 1 MHz
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 600 V, IC = 15 A,
VGE = 15 V
-- -- 3 mA
-- -- ± 250 nA
4.5 6.5 8.5
-- 1.9 2.4
-- 2.2 --
-- 2.3 --
V
V
V
V
-- 2650 --
-- 143 --
-- 96 --
pF
pF
pF
-- 15 -- ns
-- 20 -- ns
-- 160 --
ns
-- 100 180 ns
-- 3 4.5 mJ
--
0.6 0.9
mJ
--
3.6 5.4
mJ
-- 15 -- ns
-- 20 -- ns
-- 170 --
ns
-- 150 --
ns
--
3.2 4.8
mJ
--
0.8 1.2
mJ
--
4.0 6.0
mJ
--
120 180
nC
-- 16 22 nC
-- 50 65 nC
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTDTU Rev. C1
2
www.fairchildsemi.com







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