IGBT. FGA15S125P Datasheet

FGA15S125P IGBT. Datasheet pdf. Equivalent

Part FGA15S125P
Description IGBT
Feature FGA15S125P — 1250 V, 15 A Shorted-anode IGBT FGA15S125P 1250 V, 15 A Shorted-anode IGBT August 201.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA15S125P Datasheet




FGA15S125P
FGA15S125P
1250 V, 15 A Shorted-anode IGBT
August 2013
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.25 V @ IC = 15 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for switching applications.
The device can operate in parallel configuration with excep-
tional avalanche capability . This device is designed for induc-
tion heating and microwave oven.
C
G CE
TO-3PN
G
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
FGA15S125P Rev. C3
1
Ratings
1250
± 25
30
15
45
30
15
136
68
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
1.1
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
www.fairchildsemi.com



FGA15S125P
Package Marking and Ordering Information
Device Marking
FGA15S125P
Device
FGA15S125P
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = 1250V, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
TC = 25oC
IC = 15A, VGE = 15V
TC = 125oC
IC = 15A, VGE = 15V,
TC = 175oC
IF = 15A, TC = 25oC
IF = 15A, TC = 175oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 2.25 2.72
- 2.5 -
- 2.75 -
- 2 2.55
- 2.55 -
V
V
V
V
V
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600V, IC = 15A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 15A,
RG = 10Ω, VGE = 15V,
Resistive Load,, TC = 175oC
VCE = 600V, IC = 15A,
VGE = 15V
- 1360 -
- 40 -
- 20 -
pF
pF
pF
- 10 -
- 260 -
- 400 -
- 100 -
- 0.74 -
- 0.50 -
- 1.24 -
- 11 -
- 320 -
- 420 -
- 250 -
- 0.94 -
- 1.23 -
- 2.17 -
- 129 -
- 9-
- 66 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
©2012 Fairchild Semiconductor Corporation
FGA15S125P Rev. C3
2
www.fairchildsemi.com







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