STC403F Silicon Transistor Datasheet

STC403F Datasheet, PDF, Equivalent


Part Number

STC403F

Description

NPN Silicon Transistor

Manufacture

KODENSHI

Total Page 6 Pages
Datasheet
Download STC403F Datasheet


STC403F
STC403F
NPN Silicon Transistor
Applications
Power amplifier application
High current switching application
PIN Connection
Features
Power transistor General Purpose application
Low saturation voltage
: VCE(sat)=0.4V(Typ.)
High Voltage: VCEO= 60V Min
Ordering Information
Type No.
Marking
Package Code
STC403F
C403
YWW
SOT-89
C403: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Absolute Maximum Ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
** : When mounted on ceramic substrate(250 ㎟×0.8t)
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
PC**
Tj
Tstg
Rating
80
60
5
3
6
0.5
1
150
-55~150
SOT-89
[Ta=25]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T5B015-001
1

STC403F
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE * VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT VCB=5V, IC=0.5A
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
Fall Time
* hFE rank : 200~400 Only
ton
tstg
tf
STC403F
(Ta=25°C)
Min. Typ. Max. Unit
60 - - V
- - 50 μA
- - 50 μA
200 - 400 -
- 0.7 1
V
- 0.4 1
V
- 30
- MHz
- 35 - pF
- 0.65 -
- 1.3
-
- 0.65 -
KSD-T5B015-001
2


Features STC403F NPN Silicon Transistor Applicat ions • Power amplifier application High current switching application P IN Connection Features • Power trans istor General Purpose application • L ow saturation voltage : VCE(sat)=0.4V(T yp.) • High Voltage: VCEO= 60V Min O rdering Information Type No. Marking Package Code STC403F C403 YWW SOT-8 9 C403: DEVICE CODE, YWW(Y : Year code , WW : Weekly code) Absolute Maximum R atings Characteristic Collector-Base vo ltage Collector-Emitter voltage Emitter -base voltage Collector current Collect or Power dissipation Junction temperatu re Storage temperature * : Single pulse , tp= 300 ㎲ ** : When mounted on cera mic substrate(250 ㎟×0.8t) Symbol VC BO VCEO VEBO IC ICP* PC PC** Tj Tstg R ating 80 60 5 3 6 0.5 1 150 -55~150 SO T-89 [Ta=25℃] Unit V V V A(DC) A(Puls e) W °C °C KSD-T5B015-001 1 Electr ical Characteristics Characteristic S ymbol Test Condition Collector-Emitte r breakdown voltage BVCEO IC=50mA, IB=0 Collector cut-off curr.
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