STC403Q Silicon Transistor Datasheet

STC403Q Datasheet, PDF, Equivalent


Part Number

STC403Q

Description

NPN Silicon Transistor

Manufacture

KODENSHI

Total Page 6 Pages
Datasheet
Download STC403Q Datasheet


STC403Q
STC403Q
NPN Silicon Transistor
Applications
Power amplifier application
High current switching application
PIN Connection
Features
Power transistor General Purpose application
Low saturation voltage
: VCE(sat)=0.4V(Typ.)
High Voltage: VCEO= 60V Min
Ordering Information
Type No.
Marking
STC403Q
STC403
: Year & Week Code
Package Code
SOT-223
SOT-223
Absolute Maximum Ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
** : When mounted on ceramic substrate(250 ㎟×0.8t)
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
PC**
Tj
Tstg
Rating
80
60
5
3
6
1.1
1.5
150
-55~150
[Ta=25]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T5A002-002
1

STC403Q
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Switching
Time
Turn-on Time
Storage Time
BVCEO
ICBO
IEBO
hFE *
VBE(ON)
VCE(sat)
fT
Cob
ton
IC=50mA, IB=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCB=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
tstg
Fall Time
* hFE rank : 200~400 Only
tf
STC403Q
(Ta=25°C)
Min. Typ. Max. Unit
60 -
--
--
200 -
- 0.7
- 0.4
- 30
- 35
-V
50 μA
50 μA
400 -
1V
1V
- MHz
- pF
- 0.65
-
- 1.3
-
- 0.65
-
KSD-T5A002-002
2


Features STC403Q NPN Silicon Transistor Applicat ions • Power amplifier application High current switching application P IN Connection Features • Power trans istor General Purpose application • L ow saturation voltage : VCE(sat)=0.4V(T yp.) • High Voltage: VCEO= 60V Min O rdering Information Type No. Marking STC403Q STC403□ □ : Year & Week C ode Package Code SOT-223 SOT-223 Abs olute Maximum Ratings Characteristic Co llector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector Power dissipation Jun ction temperature Storage temperature * : Single pulse, tp= 300 ㎲ ** : When mounted on ceramic substrate(250 ㎟×0 .8t) Symbol VCBO VCEO VEBO IC ICP* PC PC** Tj Tstg Rating 80 60 5 3 6 1.1 1. 5 150 -55~150 [Ta=25℃] Unit V V V A( DC) A(Pulse) W °C °C KSD-T5A002-002 1 Electrical Characteristics Charact eristic Symbol Test Condition Collec tor-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-E.
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