SNN0310Q
Advanced N-Ch Trench MOSFET
100V, 3A N-Channel Power Trench MOSFET
Features
Max. RDS(ON) = 150m at VGS = 10V, ID = 2A Low gate charge: Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G D S
SNN03...
