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K20E60U

Toshiba

Silicon N-Channel MOSFET


Description
MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 12 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packagi...



Toshiba

K20E60U

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