K20E60U Datasheet PDF | Toshiba





(PDF) K20E60U Datasheet

Part Number K20E60U
Description TK20E60U
Manufacture Toshiba
Total Page 6 Pages
PDF Download Download K20E60U Datasheet PDF

Features: TK20E60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK 20E60U Switching Regulator Application s • Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) • High forwar d transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement-mo de: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 °C) Characteristics Drain-source vol tage Gate-source voltage Drain curren t DC (Note 1) Pulse (t = 1 ms) (Note 1 ) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2 ) Avalanche current Repetitive avalan che energy (Note 3) Channel temperatur e Storage temperature range Symbol VD SS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 190 144 15 19 15 0 −55~150 Unit V V A W mJ A mJ °C C Unit: mm JEDEC ⎯ JEITA ⎯ T OSHIBA 2-10V1A Weight : 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltag.

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K20E60U datasheet
TK20E60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20E60U
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.165 (typ.)
High forward transfer admittance: Yfs= 12 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
20
40
190
144
15
19
150
55~150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10V1A
Weight : 1.35 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
0.658
83.3
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.12 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
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1 2010-02-10

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